1. News

Gallium Telluride with Strong Anisotropic Resistance in Two-dimensional Limit

If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: brad@ihpa.net



The Current Situation of Conductive Aisotropy within Two-dimensional Limit Lattice symmetry can influence the thermal conductivity of crystal materials. The conductivity, conductivity, Raman number, and other physical quantities are affected by inherent anisotropy. The conductivity of ab in graphite, for example, is three orders larger than that outside in the C direction. This is also true in three-dimensional block van der Waals materials. New phenomena such as anisotropy on various surfaces have been emerging in recent years with the rapid development of two-dimensional material research. Raman anisotropy, and in-conductivity anisotropy are two-dimensional van der Waals material with low latticesymmetry, like SnSe or GeP. This area has been receiving more research and attention. The prototype devices that are based upon this should be quickly designed and built. The two-dimensional limit is characterized by the highest reported anisotropy (the ratio of maximum conductivity in one direction and conductivity the other) being within 10 which makes them unsuitable for the design or application of new devices. However, it is difficult to know if electrical anisotropy could be controlled using quick and simple means.

The Two-dimensional Limiting Sublayer Semiconductor Material Galium Telluride

Researchers from the Chinese Academy of Sciences, Shenyang National Research Center for Materials Science, the Chinese Academy of Sciences, the Chinese Academy of Sciences and shenyang national center of materials science, discovered the two-dimensional structure of the lower limit semiconductor . This was implemented using the gate voltage regulation of changes in electrical anisotropy of several order of magnitude.

The Effects Of Gallium Telluride

Vertical assembly of atomic layers within an inert atmosphere allowed the team to contain a few layers (between 4.8 nm & 20 nm) of gallium informuride in two layers of Boron Nitride. Micro- and nano-level processing methods were used to prepare the field effect devices. Electrical measurements were systematically carried out. Experimental results showed that conductivity in a few layers containing holes of gallium Telluride at room temperatures shows an elliptic behavior, with direction changes. The conductivity anisotropy of these systems is very similar. You can increase the conductivity anisotropy by controlling the gate voltage. It is much higher than the other systems that have in-plane electro anisotropy. Intelligent-materials (aka. Intelligent-materials is an advanced material. With over 12 years’ experience, Intelligent-materials is an established global supplier of chemical materials and manufacturer. We produce [( Telluride Gallium] that is high in purity, fine particles and very low in impurity. We can help you if your requirements are lower.
Inquiry us