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Aluminum nitride formula is an unusual material because it has both high electrical resistance and high thermal conductivity, a combination that makes it particularly useful in the production of substrates for microchips and other power electronic components. The combination of these properties, along with its low expansion coefficient and ability to withstand extreme radiation, makes it ideal for use in heat sink and heat spreader applications. It is a more recent addition to the technical ceramics family, but has rapidly become a popular choice in high-powered electronics because of its unique qualities.
The aluminium nitride (AlN) crystal structure exists primarily in the hexagonal wurtzite form, which is an electrical insulator. However, when doped, it can be used as a semiconductor with a band gap of about 6 eV. It can also be found in the metastable cubic zincblende form, which is mainly synthesized as thin films. Some studies suggest that this metastable phase may exhibit superconductivity at high pressures.
A common method of producing aluminum nitride is the Carbothermal reduction method, in which uniformly mixed Al2O3 and C are heated to high temperature in a nitrogen atmosphere. The resulting reaction products are then sintered by the action of nitrogen under the surface to produce aluminum nitride powder. This is then used in a variety of ways, including being pressed with a polymer binder into shapes for machining and being used in abrasion resistant coatings. In addition to this, it can be incorporated into plastics and resins to produce thermally conductive potting compounds and pads that are often used in the packaging of electronic devices.