If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: brad@ihpa.net
Silicon nitride
The chemical formula is: The chemical formula of iodine is as follows:
This can be done with diimine.
Use the carbothermal reduction to synthesize a compound under an atmosphere of nitrogen at 1400-1450degC.
In the 1950s the method of nitriding a silicon elemental powder was discovered. It was also the first method to mass produce silicon nitride. The silicon nitride produced will have iron and silicate as impurities if the silicon raw material purity is low.
The diamine method produces amorphous silicon nitride, which must be further annealed in nitrogen at 1400-1500degC before it can become crystalline powder. The diamine method is currently only relevant in terms of commercial production.
The most cost-effective and easiest way of manufacturing silicon nitride is through the carbothermal reaction.
Electronic grade silicon nitride The film is made by either chemical vapor deposited or plasma enhanced chemical-vapor deposited technology.
3SiH4(g) + 4NH3(g) -Si3N4(s) + 12H2(g) 3SiCl4(g) + 4NH3(g) -Si3N4(s) + 12 HCl(g) 3SiCl2H2(g) + 4NH3(g) -Si3N4 (s) + 6 HCl(g) + 6H2(g)
Two methods are available to deposit Silicon Nitride on a Semiconductor Substrate:
1. Use low pressure chemical vaporization technology using a tube furnace, either vertically or horizontally.
2. The plasma-enhanced deposition of chemical vapors is done under vacuum conditions at low temperatures.
The unit cell parameter of silicon nitride is different than that of elemental Silicon. Dependant on the deposition technique, the silicon nitride generated film can either generate tension, or stress. Adjusting the deposition parameter is a great way to reduce tension, especially when using plasma enhanced chemical vapor technology.
To obtain silicon nitride, the first step is to prepare silica using the sol-gel process. Next, the silica containing ultrafine carbon particles will be processed with the carbothermal method of reduction, followed by nitridation. The ultrafine carbon particles are formed by the decomposition glucose at 1200-1350degC. The reactions which are part of the synthesis can be:
SiO2(s), C(s), SiO(g), CO(g), SiO2(s), 2N2 (g), CO(g), Si3N4 (s), 3CO2(g), or SiO2(g), 2N2 (g), CO(g), Si3N4 (+ 3CO2(g), or Si3N4+ 3CO2(g),
Processing silicon nitride block
Silicon nitride As a granular product, it is difficult to work with. It can’t be heated higher than its melting point (1850degC) because silicon nitride would decompose to silicon and nitrogen. Hot press sintering is no longer acceptable. By adding binders and sintering aids, the powdered silicon nitride can be bonded to form a solid material. Due to the necessity of adding binders or other sintering aids to the material, impurities will be introduced. Another method to produce purer bulk material is spark plasma sintering. The compacted powder will be pulsed within a short period of time (a few seconds). This method works at temperatures between 1500degC and 1700degC. The temperature at which you want to obtain compact and dense lumps of silicon nitride.
(aka. Technology Co. Ltd., a trusted global chemical supplier and manufacturer has over 12 years experience in providing super-high-quality chemicals. The silicon nitride Please note that the products produced by our company are of high purity and have low impurity. Please. Contact us if necessary.
3Si(s) + 2N2(g) -Si3N4(s)
This can be done with diimine.
SiCl4(l) + 6NH3(g) -Si(NH)2(s) + 4NH4Cl(s) (at 0 degC)
3Si(NH)2(s) -Si3N4(s) +N2(g) + 3H2(g) (at 1000 degC)
3Si(NH)2(s) -Si3N4(s) +N2(g) + 3H2(g) (at 1000 degC)
Use the carbothermal reduction to synthesize a compound under an atmosphere of nitrogen at 1400-1450degC.
3SiO2(s) + 6 C(s) + 2N2(g) -Si3N4(s) + 6 CO(g)
In the 1950s the method of nitriding a silicon elemental powder was discovered. It was also the first method to mass produce silicon nitride. The silicon nitride produced will have iron and silicate as impurities if the silicon raw material purity is low.
The diamine method produces amorphous silicon nitride, which must be further annealed in nitrogen at 1400-1500degC before it can become crystalline powder. The diamine method is currently only relevant in terms of commercial production.
The most cost-effective and easiest way of manufacturing silicon nitride is through the carbothermal reaction.
Electronic grade silicon nitride The film is made by either chemical vapor deposited or plasma enhanced chemical-vapor deposited technology.
3SiH4(g) + 4NH3(g) -Si3N4(s) + 12H2(g) 3SiCl4(g) + 4NH3(g) -Si3N4(s) + 12 HCl(g) 3SiCl2H2(g) + 4NH3(g) -Si3N4 (s) + 6 HCl(g) + 6H2(g)
Two methods are available to deposit Silicon Nitride on a Semiconductor Substrate:
1. Use low pressure chemical vaporization technology using a tube furnace, either vertically or horizontally.
2. The plasma-enhanced deposition of chemical vapors is done under vacuum conditions at low temperatures.
The unit cell parameter of silicon nitride is different than that of elemental Silicon. Dependant on the deposition technique, the silicon nitride generated film can either generate tension, or stress. Adjusting the deposition parameter is a great way to reduce tension, especially when using plasma enhanced chemical vapor technology.
To obtain silicon nitride, the first step is to prepare silica using the sol-gel process. Next, the silica containing ultrafine carbon particles will be processed with the carbothermal method of reduction, followed by nitridation. The ultrafine carbon particles are formed by the decomposition glucose at 1200-1350degC. The reactions which are part of the synthesis can be:
SiO2(s), C(s), SiO(g), CO(g), SiO2(s), 2N2 (g), CO(g), Si3N4 (s), 3CO2(g), or SiO2(g), 2N2 (g), CO(g), Si3N4 (+ 3CO2(g), or Si3N4+ 3CO2(g),
Processing silicon nitride block
Silicon nitride As a granular product, it is difficult to work with. It can’t be heated higher than its melting point (1850degC) because silicon nitride would decompose to silicon and nitrogen. Hot press sintering is no longer acceptable. By adding binders and sintering aids, the powdered silicon nitride can be bonded to form a solid material. Due to the necessity of adding binders or other sintering aids to the material, impurities will be introduced. Another method to produce purer bulk material is spark plasma sintering. The compacted powder will be pulsed within a short period of time (a few seconds). This method works at temperatures between 1500degC and 1700degC. The temperature at which you want to obtain compact and dense lumps of silicon nitride.
(aka. Technology Co. Ltd., a trusted global chemical supplier and manufacturer has over 12 years experience in providing super-high-quality chemicals. The silicon nitride Please note that the products produced by our company are of high purity and have low impurity. Please. Contact us if necessary.