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Aluminum nitride, also known as aln, is a non-toxic, insulating ceramic with a diamond-like wurtzite type crystal structure. It has a small density, high strength, excellent heat resistance and high thermal conductivity.
Its wide bandgap makes it a suitable material for the fabrication of III-V semiconductor devices. It has a high electron mobility, low leakage current and is a good choice for the buffer layer in HEMTs (High-Electron Mobility Transistors).
The aln melting point is very high, around 2110 °C. It has a high resistance to corrosion and is an electrical insulator, with a dielectric constant of 2.8. This value is comparable to that of silicon dioxide. Its thermal conductivity is
AlN can be sputter deposited from its powder form by using a plasma arc source or an ion beam. The ion source sputters the target material onto a substrate at a high rate of speed and at high temperatures. This method is suitable for the deposition of multi-component compound films.
An alternative technique to ion beam sputtering is the carbothermal reduction method. This involves heating the uniformly mixed Al2O3 and C in a nitrogen atmosphere. Then the resulting product reacts with N2 to form AlN. This method allows for the control of both the deposition temperature and the composition of the film. It is therefore suitable for the production of n-channel and p-channel AlN transistors.