The Property And Application of Bismuth Telluride

What property does Bismuth Telluride have?

Bismuth telluride The molecular formula of the powder is Bi2Te3. Bismuth telluride, an indirect band-gap semiconductor, has a band gap of 0.145eV at room temperature, electron mobility of 0.135m2/(V*s) and hole mobility of 4.×10-2m2/ (V*s), and a coefficient of thermoelectric quality of 1.6×10-3/K.
Bismuth Telluride is a dense material with a density 7.8587g/cm3 at a melting temperature of 585degC. It has a covalent bond and certain ionic bonds. Bismuth telluride exhibits the characteristics of a ‘topological insulator’, allowing electrons on its surface to move freely without wasting any energy.

Bismuth Telluride is prepared by the Bridgman Method, Zone Smelting Method, and Czochralski Method. Bismuth telluride, a semiconductor, has a good electrical conductivity and mediocre thermal conductivity.

How is Bismuth Teluride used?

Bismuth-telluride-based semiconductors have high performance thermoelectric conversion in the low- and mid-temperature range. These materials are widely used to control temperature and for local refrigeration in microelectronics. The applications of these devices are excellent in thermoelectric power generation and industrial waste heat recovery.

The carrier concentration and phonon diffusion can be optimized through alloying to improve electrical performance.

The dangers of bismuth-telluride are low but it can be fatal in large doses. The material is able to allow electrons on its surface to move at room temperatures without consuming energy, and this will increase the operating speed.

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