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gallium antimonide is a semiconductor material that is used in infrared LEDs, thermo-photovoltaic systems, and photoresists. It has a very high refractive index and excellent sensitivity, which makes it an ideal choice for these applications.
gallium antimonide wafers are produced through the Czochralski method and are supplied in a variety of orientations and sizes. They are available in mechanical, epi-ready, and n-type configurations.
GaSb is a critical element in uncooled medium-long-wave infrared detectors and focal plane arrays, which have very long life and high sensitivity. It is also useful for high-resistance infrared lasers and thermal photovoltaic cells.
The use of gallium antimonide is increasing due to its many beneficial properties, including low power consumption and a wide frequency response. These properties are essential for modern semiconductor devices, making it a smart choice for thermal photovoltaics, infrared LEDs, and thermocouple sensors.
Silicon doped gallium antimonide wafers are increasingly common in semiconductor devices because of their ability to enhance conductivity, lower power consumption and increase sensitivity. These materials have low loss and small electron effective mass.
Understanding the Damping Coefficients of gallium antimonide
The damping coefficients of gallium antimonide are a function of temperature and localized vibrations of Sb and Se atoms. They are measured with a damped harmonic oscillator called the dcVAF, which shows how the atoms behave in solids and liquids.
These results are useful for understanding the damping characteristics of this important semiconductor. They can also help scientists and engineers tailor the properties of this material and optoelectronic devices.